Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals

Abstract

The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.< >