A theoretical study of the resonant magneto-optical spin-flip transitions due to electrons bound to shallow donors is made. We present a general formalism of the integrated absorption coefficient for semiconductors having an arbitrary crystal structure. The model is based on the parity-violating spin-orbit interaction responsible for the active electric-dipole transition. Simple analytic expressions of the integrated absorption coefficient are obtained for the Faraday and Voigt field configurations and for any crystals having zinc-blende and wurtzite structure, respectively. A comparison between theory and far-infrared magneto-optical transmission measurements in InSb and ${\mathrm{Cd}}_{0.9}$${\mathrm{Mn}}_{0.1}$Se yields to the strength of the spin-orbit interaction and effective Bohr radius of the donors involved.
Chin-Yu YehZhiwei LüSverre FroyenAlex Zunger
Z. I. UritskiǐН. Г. БебенинВ. Н. Сорокин
I. G. GavrikovaV. P. Migal’A. L. RvachevR. V. Chigarkova