JOURNAL ARTICLE

Voltage Linearity and Leakage Currents of Crystalline and Amorphous SrTa2O6Thin Films Fabricated by Sol-Gel Method

Abstract

Abstract Compared crystalline SrTa2O6 (STA), amorphous STA thin film showed a lower dielectric constant (ϵ), but better voltage linearity. Among the amorphous thin films, 700°C annealed thin film showed a high ϵ of about 40, the lowest leakage current of 10−8 A/cm2 and very good voltage linearity with a quadratic voltage capacitance coefficient (α) of 27 ppm/V2. In the crystalline thin film, a negative α with no frequency dependency was observed, suggesting that a dipolar relaxation occurred and caused the larger voltage nonlinearity. The decreasing positive α with increasing frequency property of the amorphous thin films suggested electrode polarization occurred. Keywords: SrTa2O6 high-kvoltage linearityleakage current Acknowledgments We would like to thank for the support of The Murata Science Foundation and the Grant-in-Aid for Young Scientists (B), The Ministry of Education, Culture, Sports, Science and Technology, Japan.

Keywords:
Materials science Amorphous solid Thin film Dielectric Linearity Voltage Biasing Leakage (economics) Analytical Chemistry (journal) Optoelectronics Electrical engineering Nanotechnology Crystallography

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