Preparation of Zr-RICH Pb(Zr_xTi_1-x)O₃ thin films and their properties

Abstract

Abstract An RF planar magnetron sputtering equipment with three cathodes was used to fabricate Zr-rich PZT thin films on PLT/Pt/Ti/SiO2/Si substrates using a multi-target. The multi-target consisted of PbO and metal titanate pellets on a zirconium metal plate. The optimum sputtering conditions were a gas content of Ar:O2 = 8:2 Sccm, gas pressure of 5 × 10×3 Torr, RF power of 100 W and substrate temperatures of 630–660°C. Polycrystalline Zr-rich PZT thin films have been successfully grown onto platinum film substrates, although the crystal structures of films were sensitive to the substrate temperature. The temperature dependence of the dielectric constant, tan δ and pyroelectric current of the PZT films were measured. Significant peak for the pyroelectric current was observed at the transition temperature of about 90°C from a low temperature to high temperature rhombohedral ferroelectric phases in as-grown PZT films without a poling treatment. Therefore, Zr-rich PZT films sputtered on PLT/Pt/Ti/SiO2/Si substrate possess desirable properties for potential applications to pyroelectric devices and a further goal was to integrate ferroelectric elements into semiconductor microelectronics devices.