Unforeseen properties of MnAs epilayers grown on GaAs semiconductor

B. Rache Salles; F. Vidal; V. H. Etgens; Romain Breitwieser; M. Marangolo; M. Eddrief

doi:10.1016/j.physb.2009.06.069

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Unforeseen properties of MnAs epilayers grown on GaAs semiconductor

B. Rache Salles F. Vidal V. H. Etgens Romain Breitwieser M. Marangolo M. Eddrief

Year: 2009 Journal: Physica B Condensed Matter Vol: 404 (18)Pages: 2684-2688 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2009.06.069

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Keywords:

Spintronics Molecular beam epitaxy Materials science Condensed matter physics Epitaxy Magnetic semiconductor Semiconductor Optoelectronics Ferromagnetism Nanotechnology Physics Layer (electronics)

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Magnetic properties of thin films

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum and electron transport phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Unforeseen properties of MnAs epilayers grown on GaAs semiconductor

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