Bipolar resistive switching behaviors of Ag/Si<sub>3</sub>N<sub>4</sub>/Pt memory device

Bingxue Sun; Lifeng Liu; Y. Wang; Dedong Han; X. Y. Liu; Runze Han; Jinfeng Kang

doi:10.1109/icsict.2008.4734697

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JOURNAL ARTICLE

Bipolar resistive switching behaviors of Ag/Si₃N₄/Pt memory device

Bingxue Sun Lifeng Liu Y. Wang Dedong Han X. Y. Liu Runze Han Jinfeng Kang

Year: 2008 Vol: 91 Pages: 925-927

DOI: 10.1109/icsict.2008.4734697

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Abstract

The resistive switching behavior of Ag/Si ₃ N ₄ /Pt device was observed and studied for the first time. Resistance ratio larger than 4*10 ² and 10 ⁴ s retention time were achieved which indicating its potential for resistive switching memory application. A physical model is proposed to explain the resistive switching behaviors of Ag/Si ₃ N ₄ /Pt devices.

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Bipolar resistive switching behaviors of Ag/Si₃N₄/Pt memory device

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