Interface formation and epitaxy of CaF2 on CoSi2(111)Si(111)

N. Guerfi; T.A. Nguyen Tan; J.‐Y. Veuillen; R.C. Cinti

doi:10.1016/0042-207x(90)93829-8

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Interface formation and epitaxy of CaF2 on CoSi2(111)Si(111)

N. Guerfi T.A. Nguyen Tan J.‐Y. Veuillen R.C. Cinti

Year: 1990 Journal: Vacuum Vol: 41 (4-6)Pages: 943-946 Publisher: Elsevier BV

DOI: 10.1016/0042-207x(90)93829-8

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Keywords:

X-ray photoelectron spectroscopy Epitaxy Annealing (glass) Thin film Materials science Auger Molecular beam epitaxy Auger electron spectroscopy Crystallography Layer (electronics) Analytical Chemistry (journal) Chemistry Nanotechnology Chemical engineering Atomic physics Metallurgy

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Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Interface formation and epitaxy of CaF2 on CoSi2(111)Si(111)

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Summary Abstract: Molecular-beam epitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)

Heteroepitaxy of insulator/metal/silicon structures: CaF2/NiSi2/Si(111) and CaF2/CoSi2/Si(111)

Structure of CaF2/Si(111) Interface.

Initial atomic structure of CaF2/Si(111) interface formation

Structure of the Si(111)/CaF2 interface