Semi/non-polar nitride quantum wells for high-efficient light emitters

Abstract

We describe the optical properties of semi/non-polar InGaN and AlGaN quantum wells. In semipolar (11¯22) InGaN QWs, spatially uniform but spectrally broad emissions are observed. This finding is interpreted with consideration of the exciton migration length shortened by the fast radiative recombination lifetime due to the reduced electric field. Non/semipolar AlGaN QWs are also fabricated. In the semipolar (1¯102) AlGaN QWs, the radiative recombination lifetimes faster than that in the (0001) QW are confirmed experimentally. As a consequence, much stronger emission is achieved from the semipolar AlGaN QWs at room temperature