GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

A. E. Nikolaev; S. Rendakova; И.П. Никитина; Konstantin Vassilevski; V. Dmitriev

doi:10.1007/s11664-998-0401-z

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

A. E. Nikolaev S. Rendakova И.П. Никитина Konstantin Vassilevski V. Dmitriev

Year: 1998 Journal: Journal of Electronic Materials Vol: 27 (4)Pages: 288-291 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-998-0401-z

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Keywords:

Epitaxy Full width at half maximum Materials science Photoluminescence Hydride Heterojunction Optoelectronics Wafer Analytical Chemistry (journal) Crystallography Chemistry Nanotechnology Metallurgy Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

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