Silicon Schottky retinas for infrared imaging

Abstract

Silicon Schottky barrier diode arrays, operating in a high sensitivity storage mode, provide the basis for a new class of IR imaging sensor. A Pd on p-Si retina which has a wavelength dependent quantum efficiency from 1 to 3.5 µm is described, This device has a noise equivalent temperature of .17K against a 300K background. The operating temperature is 120K and retina nonuniformities cause negligible reduction in sensitivity.