Radiation Tolerance Studies of BTeV Pixel Readout Chip Prototypes

Abstract

We report on several irradiation studies performed on BTeV preFPIX2 pixel readout chip prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The preFPIX2 pixel readout chip has been implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose of 26 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been measured.