Sensitivity analysis of transient measurements using the microwave cavity perturbation technique

Abstract

The application of microwave cavity perturbation technique for the study of transients in semiconductors is becoming popular due to its simplicity in measurement procedure and high sensitivity. This paper discusses the effects of quality factor, sample size, and coupling factor on the sensitivity of the measurement. Also, it deals with a measurement approach for the study of triplet state transitions and excited state studies in organic solvents. Finally, a comparison between the cavity perturbation technique and the currently used reflection technique is made.