Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon
Kuo‐Chiang HsuBor-Yir ChenHuey-Tzy HsuKun-Chih WangTri‐Rung YewHuey-Liang Hwang Huey-Liang Hwang
Abstract
Microcrystalline silicon films were deposited by diluted-hydrogen method and hydrogen-atom-treatment method at 250° C in a plasma enhanced chemical vapor deposition system and they were characterized by nuclear magnetic resonance, Raman spectroscopy, and optical bandgap measurements. One-mask a-Si:H thin film transistors (TFT's) were fabricated with those microcrystalline materials as the channel layer. The highest electron mobilities of the TFT's fabricated by diluted-hydrogen method and hydrogen-atom-treatment method were 1.23 and 1.04 cm 2 /V·s, respectively without any thermal treatment steps.
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