All-Inkjet-Printed Organic Thin-Film Transistors with Silver Gate, Source/Drain Electrodes

Abstract

We report high-performance all-inkjet-printed organic thin-film transistors (OTFTs), where inkjet-printed silver electrodes, cross-linked poly(4-vinylphenol) (PVP) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were used as gate/source/drain electrodes, a gate dielectric layer and an active semiconductor layer, respectively. To evaluate quality of the active semiconductor layer, we also fabricated OTFTs by using spin-coating and drop-casting methods for TIPS-pentacene layer on the inkjet-printed PVP gate dielectric layer. Comparable TFT electrical performances were obtained and well-crystallized TIPS-pentacene layer was formed for all cases. All TIPS-pentacene OTFTs show lower sub-threshold swing values than OTFTs with an evaporated pentacene active semiconductor layer on the inkjet-printed PVP gate dielectric layer. By using optimized inkjet-printing conditions, we obtained mobility of 0.06 cm 2 V -1 s -1 and on/off ratio of 10 4 for all-inkjet-printed OTFT.