Electronic structure of Si and Ge (111) surfaces and of the Si-Ge(111) interface

Abstract

The electronic density of states for Si and Ge (111) surfaces and of the Si-Ge(111) interface has been calculated using a cluster Bethe-lattice method. The calculated surface and interface states are in reasonable agreement with the available photoemission data. No interface state is seen in the mutual energy gap of Si and Ge, a fact predicted earlier by the author for the Ge-GaAs and Ge-ZnSe interfaces.