Deep level transient spectroscopy of hole traps related to CdTe self-assembled quantum dots embedded in ZnTe matrix

Abstract

The capacitance—voltage (C‐V) and deep level transient spectroscopy (DLTS) measurements have been performed on a Schottky structure containing self‐assembled CdTe quantum dots (QDs) embedded in ZnTe (p‐type) matrix. A characteristic step on the C‐V curve due to charge accumulation on QD states as well as QD related DLTS signal were found. Thermal activation energy of 0.1 eV was obtained from Arrhenius plot related to the signal. This energy level can be related either to the hole emission from the defects accompanying QD formation or to the hole emission from the QD states to the ZnTe valence band.