Zinc oxide thin films deposited by magnetron sputtering with various oxygen/argon concentrations

Abstract

Deposition of zinc oxide thin films onto silicon and thermally oxidized silicon substrates was performed by radio frequency magnetron sputtering. The obtained films were studied in function of percentage of oxygen and argon flow as process gases. Stoichiometric films were obtained in oxygen rich process conditions, which are more suitable to be p-type doped. Growth of zinc oxide films over thermally oxidized substrates resulted in better structural characteristics.