Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dots

Abstract

Red-light-emitting quantum dot injection lasers have been prepared by solid-source molecular beam epitaxy. The separate confinement heterostructure contains densely stacked layers of self-assembled InP quantum dots embedded in Ga0.51In0.49P waveguide and Si/Be-doped Al0.53In0.47P cladding layers. Edge-emitting laser diodes are processed, which show quantum dot lasing at 90 K. Thereby, the threshold current density is 172 A/cm2. The energy of the laser line is at 1.757 eV, which is very close to the peak energy of subthreshold electroluminescence.