Amorphous silicon, germanium, and silicon-germanium alloy thin-film transistor performance and evaluation

Abstract

The first hydrogenated amorphous germanium and hydrogenated amorphous silicon-germanium alloy field-effect transistors with appreciable field-effect response in n- and p-channel modes were developed by reducing the dihydride content in the films. Field-effect mobilities were derived from transistor characteristics. Hole mobilities are superior to those in pure hydrogenated amorphous silicon which offers the opportunity for improved thin-film devices.