JOURNAL ARTICLE
Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure
S. K. RayRajat MahapatraS. MaikapA. DharD. BhattacharyaJe‐Hun Lee
Year: 2004 Journal: Materials Science in Semiconductor Processing Vol: 7 (4-6)Pages: 203-208 Publisher: Elsevier BV
Keywords:
Materials science Auger electron spectroscopy Amorphous solid Heterojunction Transmission electron microscopy Sputter deposition Dielectric Gate dielectric High-κ dielectric Crystallite Layer (electronics) Analytical Chemistry (journal) Optoelectronics Sputtering Crystallography Thin film Composite material Nanotechnology
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23
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0.71
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Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Integrated Circuits and Semiconductor Failure Analysis
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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