Reactive ion etching of InAlAs with Ar/Cl2 mixtures for ridge waveguide lasers

R. Germann; S. Hausser; J.P. Reithmaier

doi:10.1016/0167-9317(93)90088-m

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Reactive ion etching of InAlAs with Ar/Cl2 mixtures for ridge waveguide lasers

R. Germann S. Hausser J.P. Reithmaier

Year: 1993 Journal: Microelectronic Engineering Vol: 21 (1-4)Pages: 345-348 Publisher: Elsevier BV

DOI: 10.1016/0167-9317(93)90088-m

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Keywords:

Reactive-ion etching Laser Materials science Optoelectronics Etching (microfabrication) Ridge Ion Dry etching Optics Chemistry Nanotechnology Geology Layer (electronics) Physics

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Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Reactive ion etching of InAlAs with Ar/Cl2 mixtures for ridge waveguide lasers

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