Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Z. H. Liu; Geok Ing Ng; S. Arulkumaran; Y. K. T. Maung; Hong Zhou

doi:10.1063/1.3573794

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Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

Z. H. Liu Geok Ing Ng S. Arulkumaran Y. K. T. Maung Hong Zhou

Year: 2011 Journal: Applied Physics Letters Vol: 98 (16) Publisher: American Institute of Physics

DOI: 10.1063/1.3573794

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Abstract

The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al2O3/AlGaN/GaN MISHEMT. Fowler–Nordheim tunneling was found to be dominant at low temperature (T<0 °C) and high electrical filed, whereas trap assistant tunneling was found to be dominant at medium electrical field and high temperature (T>0 °C).

Keywords:

Thermionic emission Materials science High-electron-mobility transistor Optoelectronics Quantum tunnelling Schottky diode Transistor Electron mobility Semiconductor Wide-bandgap semiconductor Field-effect transistor Induced high electron mobility transistor Electron Diode Electrical engineering Voltage Physics

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

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