Ian ChanP. FallahiAndy VidanRobert M. WesterveltM. HansonA. C. Gossard
Two tunnel-coupled few-electron quantum dots were fabricated in a GaAs/AlGaAs\nquantum well. The absolute number of electrons in each dot could be determined\nfrom finite bias Coulomb blockade measurements and gate voltage scans of the\ndots, and allows the number of electrons to be controlled down to zero. The\nZeeman energy of several electronic states in one of the dots was measured with\nan in-plane magnetic field, and the g-factor of the states was found to be no\ndifferent than that of electrons in bulk GaAs. Tunnel-coupling between dots is\ndemonstrated, and the tunneling strength was estimated from the peak splitting\nof the Coulomb blockade peaks of the double dot.\n
Leo P. KouwenhovenD. G. AustingSeigo Tarucha
Andreas FuhrerLinus FröbergJonas N. PedersenMagnus LarssonA. WackerMats‐Erik PistolLars Samuelson
Taubert, D.Schuh, DieterWegscheider, WernerLudwig, Stefan
Fanyao QuDaiane Rodrigues Dos SantosP.C. MoraisVictor Lopez‐RichardG. E. Marques
D. TaubertD. SchuhW. WegscheiderS. Ludwig