Excitonic transition of (ZnSe-ZnS)/CaF2 strained-layer superlattices under lower excitation

Z. P. Guan; J.H. Zhang; G.H. Fan; Xiuwei Fan

doi:10.1016/0022-0248(92)90804-r

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Excitonic transition of (ZnSe-ZnS)/CaF2 strained-layer superlattices under lower excitation

Z. P. Guan J.H. Zhang G.H. Fan Xiuwei Fan

Year: 1992 Journal: Journal of Crystal Growth Vol: 117 (1-4)Pages: 515-518 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(92)90804-r

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Keywords:

Photoluminescence Superlattice Metalorganic vapour phase epitaxy Chemical vapor deposition Excitation Layer (electronics) Exciton Substrate (aquarium) Absorption (acoustics) Chemistry Materials science Deposition (geology) Optoelectronics Condensed matter physics Nanotechnology Epitaxy Physics Geology

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Semiconductor Quantum Structures and Devices

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Excitonic transition of (ZnSe-ZnS)/CaF2 strained-layer superlattices under lower excitation

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