Electrical Properties of rf Sputtered Bismuth Telluride Thin Films

Abstract

The resistivity, Hall coefficient, and composition of thin films prepared by rf sputtering from a sintered cathode of stoichiometric Bi2Te3 were measured. Sputtering parameters were varied and affected both composition and resistivity. The polycrystalline films exhibited a strong (101̄5) fiber texture. Resistivity varied from 0.60 mΩ cm to 9.0 mΩ cm over a composition range from 25 wt % Te to 49 wt % Te with the maximum resistivity near Bi2Te3. High carrier concentration and low ionization energies indicate metallic characteristics.