Minimal Phase-Change Marks Produced in Amorphous Ge₂Sb₂Te₅ Films

Abstract

The smallest mark which can be produced in phase-change recordings has been explored using an atomic force microscope. Electrical pulses applied to amorphous Ge 2 Sb 2 Te 5 films through conducting cantilevers can produce crystalline marks, the size decreasing with decreases in input power, pulse duration, and film thickness. The smallest mark obtained is ∼10 nm in diameter in a film with thickness of ∼1 nm. Formation mechanism of the mark is discussed.