Tetracene thin film transistors with polymer gate dielectrics

Abstract

The use of polymer dielectrics is an important step towards large-area, flexible, and low-cost electronics. In this letter, we study the effect of the polymer dielectrics polystyrene and parylene C on the charge transport properties of tetracene thin films in transistor configuration. By using polymer dielectrics, the tetracene hole mobility increased by more than one order of magnitude, up to 0.2 cm2 V−1 s−1, as compared to bare silicon dioxide. We correlate this result to a favorable morphology of the tetracene films during the early stages of growth.