Silicon carbide detectors of high-energy particles

Abstract

The results of studying 4H-SiC p +-n junctions ion-implanted with aluminum as detectors of high-energy particles are reported. The junctions were formed in SiC epitaxial films grown by chemical vapor deposition. The concentration of uncompensated donors was (3–5)×1015 cm−3, and the charge-carrier diffusion length was L p=2.5 µm. The detectors were irradiated with 4.8–5.5-MeV alpha particles at 20°C. The efficiency of collection of the induced charge was as high as 0.35. The possibilities of operating SiC detectors at elevated temperatures (∼500°C) are analyzed.