Optical properties studies in InGaN/GaN multiple-quantum well

Li Zhu; Baolin Liu

doi:10.1016/j.sse.2009.01.005

ScienceGate Book Chapters

JOURNAL ARTICLE

Optical properties studies in InGaN/GaN multiple-quantum well

Li Zhu Baolin Liu

Year: 2009 Journal: Solid-State Electronics Vol: 53 (3)Pages: 336-340 Publisher: Elsevier BV

DOI: 10.1016/j.sse.2009.01.005

Get Full-Text PDF Get Analytical Report

Keywords:

Photoluminescence Light-emitting diode Materials science Indium Optoelectronics Phonon Quantum well Blueshift Spontaneous emission Relaxation (psychology) Condensed matter physics Redshift Diode Luminescence Wide-bandgap semiconductor Optics Physics

Metrics

Cited By

1.39

FWCI (Field Weighted Citation Impact)

Refs

0.85

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Optical properties studies in InGaN/GaN multiple-quantum well

Metrics

Citation History

Topics

Related Documents

Optical properties of InGaN/GaN multiple quantum well light emitting diodes

Optical Studies of InGaN/GaN Quantum Well Structures

Optical Properties of InGaN/GaN Multiple Quantum Wells

Optical Properties of Ingan/GaN Multi Quantum Well Structures

Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates