Solution-Processed Zinc Tin Oxide Semiconductor for Thin-Film Transistors

Abstract

A zinc tin oxide (ZTO) semiconductor layer for thin-film transistor was fabricated using solution-processable sol−gel material. To obtain semiconductor characteristics, ZTO gels should be annealed such that salts and organic components in the ZTO layer undergo complete decomposition. The thermal behavior of ZTO precursor materials was investigated, and the electrical performances of solution-processed transistors were analyzed as a function of the annealing temperature of the ZTO semiconductor layer. We also studied the electrical performance of transistors as a function of the Sn content of the ZTO layer, in order to understand its influence on the device characteristics of solution-processed transistors.