Ferromagnetic FeSe: Structural, electrical, and magnetic properties

Abstract

FeSe thin films were grown on GaAs (001) substrates using low-pressure metalorganic chemical vapor deposition. X-ray diffraction analysis showed that FeSe thin films were in tetragonal structure with (002) orientation. It was found that the FeSe thin films were ferromagnetic above room temperature, revealing a maximum saturation magnetization about 590emu∕cc along the in-plane magnetic easy axis. The Hall measurement indicated that the as grown FeSe thin films was of p-type conduction with hole concentration of as high as 1020∼1021cm−3. The magnetic circular dichroism spectrum was employed to study the electronic structure.