Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

T. A. Raju; A. S. Talwai

doi:10.1063/1.329294

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Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

T. A. Raju A. S. Talwai

Year: 1981 Journal: Journal of Applied Physics Vol: 52 (7)Pages: 4877-4878 Publisher: American Institute of Physics

DOI: 10.1063/1.329294

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Abstract

Metal-insulator-semiconductor capacitors using aluminum Bi2O3 and silicon have been studied for varactor applications. Reactively sputtered Bi2O3 films which under suitable proportions of oxygen and argon and had high resistivity suitable for device applications showed a dielectric constant of 25.

Keywords:

Capacitor Bismuth Materials science Dielectric Insulator (electricity) Semiconductor Argon Optoelectronics Silicon Oxide Electrical resistivity and conductivity Metal Metallurgy Electrical engineering Chemistry Voltage

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Piezoelectric Materials

Physical Sciences → Materials Science → Materials Chemistry

Electronic and Structural Properties of Oxides

Physical Sciences → Materials Science → Materials Chemistry

Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

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