A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack

Abstract

We fabricated a thin-film transistor (TFT) with an amorphous InGaZnO (a-IGZO) and aluminum oxide (AlOx) gate dielectric stack that was deposited by a solution-based atmospheric pressure chemical vapor deposition. Field effect mobility of 4.1 cm2•V-1•s-1 and on/off current ratio of over 108 were obtained. We also investigated the effects of an ozone (O3) surface treatment of gate dielectric on electrical properties of the IGZO TFTs. The O3 surface treatment of the AlOx gate dielectric reduced the maximum area density of states in the IGZO TFTs. Moreover, transfer curve hysteresis also decreased by applying the O3 surface treatment of the AlOx gate dielectric.