Growth and properties of an LiNbO <sub>3</sub> film on sapphire with an LiNbO <sub>3</sub> buffer layer

T. Nozawa

doi:10.1049/el:19870914

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Growth and properties of an LiNbO ₃ film on sapphire with an LiNbO ₃ buffer layer

T. Nozawa

Year: 1987 Journal: Electronics Letters Vol: 23 (24)Pages: 1321-1323 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19870914

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Abstract

A lithium niobate (LiNbO3) epitaxial film has been grown by magnetron RF sputtering. It was grown on a sapphire substrate with a predeposited and annealed LiNbO3 buffer layer. The effects of a buffer layer on growth-film properties were studied by physical analysis, including X-ray diffraction, reflection high-energy electron diffraction and scanning electron microscopy.

Keywords:

Sapphire Materials science Lithium niobate Epitaxy Scanning electron microscope Layer (electronics) Buffer (optical fiber) Substrate (aquarium) Diffraction Sputter deposition Reflection high-energy electron diffraction Optoelectronics Sputtering Electron diffraction Optics Thin film Composite material Laser Nanotechnology Electrical engineering

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Photorefractive and Nonlinear Optics

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth and properties of an LiNbO ₃ film on sapphire with an LiNbO ₃ buffer layer

Abstract

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Growth and properties of an LiNbO 3 film on sapphire with an LiNbO 3 buffer layer

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