Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

С. В. Новиков; J. Sinkkonen; Timur Nikitin; Leonid Khriachtchev; Markku Räsänen; Eero Haimi

doi:10.1016/j.mejo.2007.07.032

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Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

С. В. Новиков J. Sinkkonen Timur Nikitin Leonid Khriachtchev Markku Räsänen Eero Haimi

Year: 2007 Journal: Microelectronics Journal Vol: 39 (3-4)Pages: 518-522 Publisher: Elsevier BV

DOI: 10.1016/j.mejo.2007.07.032

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Keywords:

Transmission electron microscopy Materials science Raman spectroscopy Ammonium hydroxide Photoluminescence Nanocrystal Annealing (glass) Wafer Silicon Nanotechnology Optoelectronics Laser Analytical Chemistry (journal) Chemical engineering Optics Chemistry Composite material

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy

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