Deposition Profile Simulation Using the Direct Simulation Monte Carlo Method

Abstract

A deposition simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches in semiconductor manufacturing processes from vacuum to atmospheric pressure conditions. This simulator is applied to several deposition processes such as sputter deposition, plasma chemical vapor deposition, and atmospheric‐pressure chemical vapor deposition. Experimental results agree with simulator results concerning molecular collision, sticking coefficient, and appropriate surface‐reaction probability.