Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

Z. Q. Zhu; Takafumi Yao; Hiroshi Mori

doi:10.1007/bf02661614

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Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

Z. Q. Zhu Takafumi Yao Hiroshi Mori

Year: 1993 Journal: Journal of Electronic Materials Vol: 22 (5)Pages: 463-466 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02661614

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Keywords:

Doping Molecular beam epitaxy Chlorine Analytical Chemistry (journal) Secondary ion mass spectrometry Photoluminescence Epitaxy Chemistry Electrical resistivity and conductivity Materials science Ion Inorganic chemistry Optoelectronics Nanotechnology Layer (electronics) Chromatography

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Selective doping of N-type ZnSe layers with chlorine grown by molecular beam epitaxy

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