Silicon deposition on Si(111) surfaces at room temperature and effects of annealing

Hitoshi Nakahara; Ayahiko Ichimiya

doi:10.1016/0022-0248(90)90574-5

ScienceGate Book Chapters

JOURNAL ARTICLE

Silicon deposition on Si(111) surfaces at room temperature and effects of annealing

Hitoshi Nakahara Ayahiko Ichimiya

Year: 1990 Journal: Journal of Crystal Growth Vol: 99 (1-4)Pages: 514-519 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(90)90574-5

Get Full-Text PDF Get Analytical Report

Keywords:

Reflection high-energy electron diffraction Electron diffraction Annealing (glass) Molecular beam epitaxy Epitaxy Chemistry Deposition (geology) Crystallography Silicon Diffraction Materials science Mineralogy Optics Nanotechnology Geology Layer (electronics) Physics Composite material

Metrics

Cited By

28.68

FWCI (Field Weighted Citation Impact)

Refs

0.94

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Advanced Electron Microscopy Techniques and Applications

Life Sciences → Biochemistry, Genetics and Molecular Biology → Structural Biology

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Surface and Thin Film Phenomena

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Silicon deposition on Si(111) surfaces at room temperature and effects of annealing

Metrics

Topics

Related Documents

Silicon needle-like surfaces for room temperature si-si bonding applications

Atomically flat gold film surfaces deposited on Si (111) surfaces at room temperature

The interaction of Si with Al(111) surfaces above room temperature

The interaction of Si with Al(111) surfaces above room temperature

Epitaxy of Nanocrystalline Silicon Carbide on Si(111) at Room Temperature