JOURNAL ARTICLE

Optoelectronic properties of amorphous hydrogenated silicon-germanium alloys

G. ConteD. Della SalaF. GalluzziG. GrilloC OstrifateC. Reita

Year: 1990 Journal:   Semiconductor Science and Technology Vol: 5 (8)Pages: 890-893   Publisher: IOP Publishing

Abstract

A study on amorphous hydrogenated silicon-germanium alloys is presented. Amorphous thin films are grown by glow discharge decomposition of silane/germane gas mixtures, in the presence of a large hydrogen concentration. Optical, electrical and photoelectrical properties of intrinsic alloys are reported and their effect on the performance of p-i-n photovoltaic devices is discussed.

Keywords:
Germanium Amorphous silicon Optoelectronics Silicon Materials science Amorphous solid Amorphous semiconductors Chemistry Crystallography Crystalline silicon

Metrics

10
Cited By
1.29
FWCI (Field Weighted Citation Impact)
8
Refs
0.82
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Thin-Film Transistor Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Silicon Nanostructures and Photoluminescence
Physical Sciences →  Materials Science →  Materials Chemistry

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