JOURNAL ARTICLE

Capacitive humidity sensor in CMOS technology

Xian-Wei YanMing QinQing‐An Huang

Year: 2001 Journal:   Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 4601 Pages: 43-43   Publisher: SPIE

Abstract

An integrated relative humidity sensor that combines a capacitive sensor with CMOS measurement circuitry on the same silicon chip has been designed, fabricated and tested. The device provides square wave. Its frequency varies with humidity over the entire range from 0% to 100%. The sensor element, which is an integrated part of the circuit, is an interdigital lateral capacitance structure formed by the aluminium layers of the CMOS process.

Keywords:
Capacitive sensing Capacitance CMOS Humidity Materials science Chip Electrical engineering Optoelectronics Electronic engineering Relative humidity Integrated circuit Silicon Engineering Electrode Physics

Metrics

3
Cited By
0.33
FWCI (Field Weighted Citation Impact)
0
Refs
0.70
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Sensor Technology and Measurement Systems
Physical Sciences →  Computer Science →  Computer Networks and Communications
Analytical Chemistry and Sensors
Physical Sciences →  Chemical Engineering →  Bioengineering
Advanced MEMS and NEMS Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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