GaAs n + - p − - n + ballistic structure

M. S. Shur; L.F. Eastman

doi:10.1049/el:19800365

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GaAs n ⁺ - p ⁻ - n ⁺ ballistic structure

M. S. Shur L.F. Eastman

Year: 1980 Journal: Electronics Letters Vol: 16 (13)Pages: 522-523 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19800365

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Abstract

Potential distribution and I/V characteristics of short n+-p−-n+ devices are calculated assuming ballistic electron transport (no collisions). The results of the calculation are in good agreement with experimental results for submicrometre GaAs n+-p−-n+ structures.

Keywords:

Ballistic conduction Gallium arsenide Electron Materials science Distribution (mathematics) Physics Condensed matter physics Computational physics Atomic physics Mathematics Quantum mechanics Mathematical analysis

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaAs n ⁺ - p ⁻ - n ⁺ ballistic structure

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Citation History

Topics

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