Optical properties of III–V strained-layer quantum wells

D. Gershoni; H. Temkin

doi:10.1016/0022-2313(89)90068-9

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Optical properties of III–V strained-layer quantum wells

D. Gershoni H. Temkin

Year: 1989 Journal: Journal of Luminescence Vol: 44 (4-6)Pages: 381-398 Publisher: Elsevier BV

DOI: 10.1016/0022-2313(89)90068-9

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Keywords:

Superlattice Materials science Tensile strain Quantum well Effective mass (spring–mass system) Condensed matter physics Layer (electronics) Ultimate tensile strength Strain (injury) Lattice (music) Deformation (meteorology) Gallium arsenide Optoelectronics Composite material Optics Physics Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optical properties of III–V strained-layer quantum wells

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