Boron doping of amorphous hydrogenated silicon films prepared by r.f. sputtering

D. Jousse; J. Saïd; J.C. Bruyère

doi:10.1016/0040-6090(85)90027-6

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Boron doping of amorphous hydrogenated silicon films prepared by r.f. sputtering

D. Jousse J. Saïd J.C. Bruyère

Year: 1985 Journal: Thin Solid Films Vol: 124 (1)Pages: 49-53 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(85)90027-6

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Keywords:

Diborane Conductivity Doping Analytical Chemistry (journal) Sputtering Amorphous solid Photoconductivity Amorphous silicon Fermi level Silicon Boron Electrical resistivity and conductivity Density of states Materials science Chemistry Thin film Crystalline silicon Crystallography Nanotechnology Electron Physical chemistry Condensed matter physics Optoelectronics Physics

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Boron doping of amorphous hydrogenated silicon films prepared by r.f. sputtering

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