MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices

Lionel Aigouy; N. Briot; D. Bouchara; Thierry Cloître; M. Di Blasio; B. Gil; J. Calas; O. Briot; R.L. Aulombard

doi:10.1006/spmi.1994.1113

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MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices

Lionel Aigouy N. Briot D. Bouchara Thierry Cloître M. Di Blasio B. Gil J. Calas O. Briot R.L. Aulombard

Year: 1994 Journal: Superlattices and Microstructures Vol: 16 (1)Pages: 71-76 Publisher: Elsevier BV

DOI: 10.1006/spmi.1994.1113

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Keywords:

Photoluminescence Materials science Superlattice Metalorganic vapour phase epitaxy Laser linewidth Exciton Heterojunction Condensed matter physics Optoelectronics Monolayer Band gap Molecular physics Layer (electronics) Optics Epitaxy Nanotechnology Laser Chemistry Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

MOVPE Growth and optical characterization of ZnSe/ZnS strained layer superlattices

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