Growth of GaAs/AlAs trench-buried multiple quantum wires by metalorganic chemical vapor deposition on V-grooved substrates

Abstract

We report the fabrication of GaAs/AlAs multiple trench-buried quantum wires (TBWs) by metalorganic chemical vapor deposition on V-grooved substrates. The shape of AlAs layers grown on the V-grooves can be changed significantly from a V-shape to U-shape by varying growth temperatures and group-V/III ratios. 30-nm-wide and 100-nm-deep AlAs trenches with nearly vertical sidewalls are formed at the growth temperature of 650 °C with the group-V/III ratio of 165, while V-shaped AlAs grooves are formed at 700 °C with the V/III ratio of 110. Vertically stacked double TBWs are formed using the 30-nm-wide trenches. The low-temperature (15 K) photoluminescence spectrum for the double TBWs shows two distinct emission peaks corresponding to the 6.5- and 8.0-nm-thick wires.