Fabrication of Sol-Gel Thin Films of Silicate-Doped PZT

Abstract

Abstract Fabrication of perovskite ferroelectric thin films by sol-gel technique with addition of silicates has been reported as the silicates enhance the crystallization and prevent the degradation of electric properties by reducing thickness [Citation1]. This technique is essential to realize high density, high speed and low voltage ferroelectric memories. In this report, we investigated silicate doping to sol-gel Pb(Zr,Ti)O3 films which is used in current devices. Keywords: PZTthin filmsol-gelferroelectric memory