Global Shutter CMOS Image Sensor With Wide Dynamic Range

Abstract

A novel concept for global shutter CMOS image sensors with Wide Dynamic Range (WDR) implementation is presented. The proposed imager is based on the multi sampling WDR approach and it allows an efficient global shutter pixel implementation achieving small pixel size and high fill factor. The proposed imager provides wide DR by applying adaptive exposure time to each pixel, according to the local illumination intensity level. Two pixel configurations, employing different kinds of 1-bit in-pixel memory were implemented. An imager, including all proposed pixels was designed and simulated in a mixed-signal 0.18μm CMOS technology. While operating at 1.8V voltage supply the proposed sensors achieve the DR up to 120dB. System architecture and operation are discussed and simulation results are presented.