Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT

Abstract

This paper presents the analytical calculation of the eigenenergies for a nanoscale symmetric double triangular quantum well (DTQW) in double gate InAlAs/InGaAs HEMT.The symmetric double triangular quantum wells formed by two similar heterostructures are separated by a barrier in the InGaAs channel.The paper accounts for the quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in the nanoscale channel at equilibrium i.e. when no gate voltage is applied.In particular, the ground and first excited energy levels are numerically calculated which represent the lowest populated sub-bands.