White photoluminescence from Si/SiO2 nanostructured film
Pham Hong DuongPhạm Thành HuyNguyễn Thị Thanh NgânChu Anh TuanT. Itoh
Abstract
Abstract We present in this work the results of PL measurement of Si‐NC embedded in Si/SiO 2 multilayer system. A very intense broad luminescence band was observed in the sample under illumination in vacuum by UV laser line. The PL intensity enhancement and quenching effect observed in different ambients can be attributed to the energy exchange from NC to MO. The storage of the annealed sample in vacuum for a long time drastically changed the PL properties of Si–NC. The origin of these phenomena will be discussed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Metrics
Topics
Related Documents
Photoluminescence from SiO2/Si/SiO2structures
Panos PhotopoulosA. G. Nassiopoulou
Electroluminescence and Photoluminescence from Scored Si-Rich SiO 2 Film/p-Si Structure
Guangzhao RanYongke SunYuan ChenLun DaiXiao-ming CuiBorui ZhangQIAO YONG-PINGZhen-chang MaZong Wan-HuaQin Guo-Gang
Synthesis and photoluminescence properties of silica-modified SiO 2 @ANA-Si-Tb@SiO 2 , SiO 2 @ANA-Si-Tb-L@SiO 2 core–shell–shell nanostructured composites
Lina FengWen‐Xian LiJinrong BaoYu‐Shan ZhengYilian LiYangyang MaKuisuo YangYan QiaoAnping Wu
Photoluminescence from Si Network in SiO2-Doped Si Films
Kenji KohnoYukio Osaka Katayama