Excitonic properties of Cd Zn1−S⧸ZnS strained-layer quantum wells

Tsunemasa Taguchi; Y. Endoh; Tetsuichiro Ohno; Yasuo Nozue

doi:10.1016/0022-2313(92)90238-5

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Excitonic properties of Cd Zn1−S⧸ZnS strained-layer quantum wells

Tsunemasa Taguchi Y. Endoh Tetsuichiro Ohno Yasuo Nozue

Year: 1992 Journal: Journal of Luminescence Vol: 52 (1-4)Pages: 123-132 Publisher: Elsevier BV

DOI: 10.1016/0022-2313(92)90238-5

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Keywords:

Exciton Photoluminescence Photocurrent Quantum-confined Stark effect Condensed matter physics Quantum well Electric field Superlattice Relaxation (psychology) Ternary operation Phonon Chemistry Spectral line Excitation Stark effect Materials science Optoelectronics Physics Optics

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Quantum Dots Synthesis And Properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Excitonic properties of Cd Zn1−S⧸ZnS strained-layer quantum wells

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